Skip to Main content Skip to Navigation
Journal articles

S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Abstract : Reliability studies are fundamental to optimize the use of new emerging technologies such as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11,000 h total) are performed under different conditions of (Vds), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented (Pout, Ids, Igs, Rds(on), Gm and Vth). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-02380186
Contributor : Olivier Latry <>
Submitted on : Tuesday, July 27, 2021 - 2:45:59 PM
Last modification on : Tuesday, July 27, 2021 - 3:04:52 PM

File

1-s2.0-S0026271419304846-am (1...
Files produced by the author(s)

Identifiers

Citation

N. Moultif, O. Latry, Mamadou Ndiaye, T. Neveu, E. Joubert, et al.. S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩. ⟨hal-02380186⟩

Share

Metrics

Record views

75

Files downloads

56